@prefix dcterms: .
@prefix foaf: .
@prefix wdrs: .
@prefix owl: .
@prefix xsd: .
@prefix gr: .
@prefix xml: .
@prefix vcard: .
@prefix dc: .
@prefix rdf: .
@prefix rdfs: .
@prefix pto: .
@prefix schema: .
# OWL DL work-arounds (instead of imports)
dc:contributor a owl:AnnotationProperty.
dc:creator a owl:AnnotationProperty.
dc:rights a owl:AnnotationProperty.
dc:subject a owl:AnnotationProperty.
dc:title a owl:AnnotationProperty.
dcterms:license a owl:AnnotationProperty.
wdrs:describedby a owl:AnnotationProperty.
foaf:Document a owl:Class.
foaf:homepage a owl:AnnotationProperty.
foaf:page a owl:AnnotationProperty.
foaf:primaryTopic a owl:AnnotationProperty.
schema:Product a owl:Class.
#OWL 1 DL compatibility of the OWL2 deprecated property
owl:deprecated a owl:AnnotationProperty.
a owl:Ontology;
dc:title "PTO: The Product Types Ontology for Semantic Web-based E-Commerce"@en;
rdfs:comment """The Product Types Ontology: Good identifiers for product types based on Wikipedia
This service provides GoodRelations-compatible class definitions for any type of product or service that has an entry in the English Wikipedia.
Vocabulary: http://www.productontology.org/#
Namespace: http://www.productontology.org/
The Product Types Ontology is designed to be used in combination with GoodRelations, a standard vocabulary for the commercial aspects of offers.
See http://purl.org/goodrelations/ for more information."""@en;
rdfs:label "The Product Types Ontology for Semantic Web-based E-Commerce"@en;
dc:contributor "The class abstracts and translations of labels are taken from Wikipedia, the free encyclopedia."@en;
dc:creator "Martin Hepp"@en;
dc:rights "The class definition texts are taken from Wikipedia, the free encyclopedia under a Creative Commons Attribution-ShareAlike 3.0 Unported (CC BY-SA 3.0) license, see http://creativecommons.org/licenses/by-sa/3.0/. Accordingly, all ontology class definitions provided in here are available under the very same license."@en;
dc:subject "E-Commerce, E-Business, GoodRelations, Ontology, Wikipedia, DBPedia"@en;
dcterms:license ;
rdfs:seeAlso ;
owl:imports ;
owl:versionInfo "2026-06-09T17:21:27.471821".
a foaf:Document;
foaf:primaryTopic .
a foaf:Document;
foaf:primaryTopic .
a foaf:Document;
foaf:primaryTopic .
a foaf:Document;
foaf:primaryTopic .
a owl:Class;
rdfs:subClassOf gr:ProductOrService, schema:Product;
rdfs:label "MOSFET"@en;
rdfs:comment """In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term metal–insulator–semiconductor field-effect transistor (MISFET) is almost synonymous with MOSFET. Another near-synonym is insulated-gate field-effect transistor (IGFET).
Physicist Julius Edgar Lilienfeld first proposed the concept of a field-effect transistor (FET) in 1925, but it was not possible to construct a working device at that time. The first working metal–oxide–semiconductor field-effect transistor (MOSFET) was invented in 1959 by engineers Mohamed Atalla and Dawon Kahng at Bell Labs. Their breakthrough—fabricating a practical field-effect transistor enabled by Atalla’s earlier work on silicon surface passivation and thermal oxidation—revolutionized electronics and paved the way for smaller and cheaper radios, calculators, computers, and other electronic devices.
The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions, especially compared to bipolar junction transistors (BJTs). However, at high frequencies or when switching rapidly, a MOSFET may require significant current to charge and discharge its gate capacitance. In an enhancement mode MOSFET, voltage applied to the gate terminal increases the conductivity of the device. In depletion mode transistors, voltage applied at the gate reduces the conductivity.
The "metal" in the name MOSFET is sometimes a misnomer, because the gate material can be a layer of polysilicon (polycrystalline silicon). Similarly, "oxide" in the name can also be a misnomer, as different dielectric materials are used with the aim of obtaining strong channels with smaller applied voltages.
The MOSFET is by far the most common transistor in digital circuits, as billions may be included in a memory chip or microprocessor. As MOSFETs can be made with either a p-type or n-type channel, complementary pairs of MOS transistors can be used to make switching circuits with very low power consumption, in the form of CMOS logic.
(Source: Wikipedia, the free encyclopedia, see http://en.wikipedia.org/wiki/MOSFET)"""@en;
rdfs:isDefinedBy ;
rdfs:label "موسفت"@ar;
rdfs:label "MOY-Tranzistorlar"@az;
rdfs:label "ماسفت ترانزیستورلار"@azb;
rdfs:label "МОП транзистор"@bg;
rdfs:label "मोस्फेट"@bh;
rdfs:label "মসফেট"@bn;
rdfs:label "MOSFET"@ca;
rdfs:label "MOSFET"@cs;
rdfs:label "MOSFET"@da;
rdfs:label "Metall-Oxid-Halbleiter-Feldeffekttransistor"@de;
rdfs:seeAlso ,
,
;
wdrs:describedby , ;
foaf:homepage ;
foaf:page .